(leiizu ^e.mi-c-ondu.cko'i o^ioaueti, una. cx !_/ 20 stern ave. springfield, new jersey 07081 u.s.a. BF506 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon planar pnp vhp oscillator mixer the bf 506 is a silicon planar epitaxial pnp transistor in jedec to-92 plastic package. it is intended for use as mixer and oscillator in the vhp range. however, it may also be used as not controlled preamplifier at low noise. absolute maximum ratings vcbo vceo vebo 'c ib ptot collector-base voltage (ie =0) collector-emitter voltage (ib =0) emitter-base voltage (lc = 0) collector current base current total power dissipation at t,mb < 45c storage temperature junction temperature -40 -35 -4 -30 -5 250 -55 to 150 150 v v v ma ma mw c c (dim 4) "? seating plane nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BF506 thermal data thermal resistance junction-ambient max 420 c/w electrical characteristics (tamb= 25c unless otherwise specified) parameter icbo collector cutoff current (ie=0) v(br)ceo collector-emitter breakdown voltage (ib=0) vjbrjebo emitter-base breakdown voltage (lc=0) hf dc current gain fr transition frequency ccbo collector-base capacitance crb reverse capacitance nf*/** noise figure gpb* power gain test conditions vcb= -20v lc = -5 ma ie --10 //a lc = -3 ma vce= -10v lc =-1 ma vce=-10v f = 100 mhz ie=0 vcb=-10v f = 1 mhz lc=0 vcb=-10v f = 1 mhz lc = -1 ma vcc= -6v rg = 50 n f = 200 mhz lc=-3ma vcc= -10.8v rl = 1kn f = 200 mhz win. typ. max -200 -35 -4 40 400 0.8 0.13 2.5 4 14 17 unit na v v - mhz pf pf db db * see test circuit ** input adapting for optimum source admittance
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